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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3110
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3110 PACKAGE Isolated TO-220
FEATURES
*Gate voltage rating 30 V *Low on-state resistance RDS(on) = 180 m MAX. (VGS = 10 V, ID = 7.0 A) *Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) *Built-in gate protection diode *Avalanche capability rated *Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current(DC) (TC = 25C) Drain Current(pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
200 30 14 42 2.0 35 150 -55 to +150 14 98
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Note1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25C, VDD = 100 V, RG = 25 , VGS = 20 V0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13333EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998,1999, 2000
2SK3110
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS
VGS(off)
Test Conditions VDS = 200 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 7.0 A VGS = 10 V, ID = 7.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 100 V, ID = 7.0 A VGS(on) = 10 V RG = 10
MIN.
TYP.
MAX. 100 10
Unit
A A
V S
2.5 3.0 120 1000 300 150 25 70 80 40
4.5
| yfs |
Drain to Source On-state Resistance RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
180
m pF pF pF ns ns ns ns nC nC nC V ns
VDD = 160 V VGS = 10 V ID = 14 A IF = 14 A, VGS = 0 V IF = 14 A, VGS = 0 V di/dt = 50 A/s
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
40 7 25 1.0 300 1.5
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D13333EJ1V0DS00
2SK3110
5 TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 45 VGS = 30 V
100
FORWARD TRANSFER CHARACTERISTICS Pulsed
ID - Drain Current - A
35 30 25 20 15 10 5 0 Pulsed 0 2 4 6 8 10 VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5.0 VDS = 10 V ID = 1 mA 4.5 4.0 3.5 3.0 2.5 2.0 0 25 50 75 100 125 150 - 50 - 25 Tch - Channel Temperature - C
ID - Drain Current - A
40
10
VGS = 10 V
1
0.1
0.01
Tch = 125C 75C 25C -25C VDS = 10 V 9 10 11 12
0.001 0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V |yfs| - Forward Transfer Admittance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS =10 V Pulsed
VGS(off) - Gate to Source Cut-off Voltage - V
10
Tch = -25C Tch = 25C
1
Tch = 75C Tch = 125C
0.1
0.01 0.01
0.1
1
10
100
ID- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 500 Pulsed 450 400 350 300 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20 ID = 14 A 7.0 A 2.8 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 250 200 150 VGS = 10 V 100 50 0 VGS = 30 V Pulsed
0.1
1
10
100
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D13333EJ1V0DS00
3
2SK3110
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 350 300 250 200 150 100 50 0 - 50 - 25 VGS = 10 V Pulsed 0 25 50 75 100 125 150 Tch - Channel Temperature - C ID = 14 A ID = 7.0 A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed
ISD - Diode Forward Current - A
10 VGS = 10 V 1 VGS = 0 V
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
tr
1000
Ciss
100
tf td(off) td(on)
100 Coss Crss 10 0.1
10
1
1 10 100 VDS - Drain to Source Voltage - V
1000
0.1
1
VDD = 100 V VGS = 10 V RG = 10 10 100
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
150
100
VDD = 160 V 100 V 40 V
12 10 8 6
100 VDD = 160 V 100 V 40 V
10
50
4 2
1 0.1
di/dt = 50A / s VGS = 0 V 1 10 100
0
0
10
20
30
40
50
0 60
ID - Drain Current - A
QG - Gate Charge - nC
4
Data Sheet D13333EJ1V0DS00
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 200 ID = 14 A 14
2SK3110
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 40
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
30
20
10
0
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse)
PW 10 1 0
s
ID - Drain Current - A
10
R
D
o S(
Li n)
te mi
d
=
10
s
ID(DC)
Po
we
rD
10
iss ip
10
0 m
io
3 m
m
m s
s
s
s
Li m
at
n
1
ite
d
TC = 25 C 0.1 Single Pulse 1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5C/W
10
Rth(ch-C) = 3.57C/W
1
0.1
0.01 0.001
Single Pulse
10
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
Data Sheet D13333EJ1V0DS00
5
2SK3110
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100
SINGLE AVALANCHE ENERGY DERATING FACTOR 120 VDD = 100 V VGS = 20 V 0 V RG = 25 IAS 14 A
IAS - Single Avalanche Energy - A
Energy Defrating Factor - %
VDD = 100 V VGS = 20 V 0 V RG = 25 Starting Tch = 25C IAS = 14 A
100 80 60 40 20 0 25
10
EA
S
=9
8m
J
1 0.01
0.1
1
10
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13333EJ1V0DS00
2SK3110
PACKAGE DRAWING(Unit : mm)
Isolated TO-220 (MP-45F)
10.00.3
3.20.2
4.50.2 2.70.2
EQUIVALENT CIRCUIT
15.00.3 30.1
Drain
12.00.2
Gate
Body Diode
40.2
13.5 MIN.
Gate Protection Diode
Source
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP.
2.50.1 0.650.1 1.Gate 2.Drain 3.Source
123
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Data Sheet D13333EJ1V0DS00
7
2SK3110
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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